maximum ratings: (t a =25c) symbol units collector-emitter voltage v ceo 40 v collector-base voltage v cbo 50 v emitter-base voltage v ebo 5.0 v continuous collector current i c 50 ma power dissipation (one die) p d 575 mw power dissipation (both die) p d 625 mw power dissipation (one die), t c =25c p d 1.8 w power dissipation (both die), t c =25c p d 2.5 w operating and storage junction temperature t j , t stg -65 to +200 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =40v 10 na i cbo v cb =40v, t a =150c 10 a i ebo v be =3.0v 10 na bv ceo i c =10ma 40 v bv cbo i c =10a 50 v bv ebo i e =10a 5.0 v v ce(sat) i c =10ma, i b =1.0ma 0.25 v v ce(sat) i c =50ma, i b =5.0ma 0.50 v v be(sat) i c =10ma, i b =1.0ma 0.60 0.90 v v be(sat) i c =50ma, i b =5.0ma 1.2 v h fe v ce =5.0v, i c =10a (md3250,a) 25 h fe v ce =5.0v, i c =10a (md3251,a) 50 h fe v ce =5.0v, i c =100a (md3250,a) 50 150 h fe v ce =5.0v, i c =100a (md3251,a) 80 300 h fe v ce =5.0v, i c =1.0ma (md3250,a) 50 150 h fe v ce =5.0v, i c =1.0ma (md3251,a) 100 300 h fe v ce =5.0v, i c =10ma (md3250,a) 50 h fe v ce =5.0v, i c =10ma (md3251,a) 100 md3250 MD3250A md3251 md3251a dual pnp silicon transistor to-78 case central semiconductor corp. tm r0 (9-june 2009) description: the central semiconductor md3250 and md3251 series types are dual pnp silicon transistors, manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case, designed for differential amplifier applications. marking: full part number
central semiconductor corp. tm to-78 case - mechanical outline md3250 MD3250A md3251 md3251a dual pnp silicon transistor r0 (9-june 2009) marking: full part number electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units h fe v ce =5.0v, i c =50ma (md3250,a) 15 h fe v ce =5.0v, i c =50ma (md3251,a) 30 f t v ce =20v, i c =10ma, f=100mhz (md3250,a) 200 mhz f t v ce =20v, i c =10ma, f=100mhz (md3251,a) 250 mhz c ob v cb =5.0v, i e =0, f=100khz 6.0 pf c ib v be =1.0v, i c =0, f=100khz 8.0 pf matching characteristics: symbol test conditions min max units h fe1 /h fe2 (note 1) v ce =5.0v, i c =100a 0.90 1.0 h fe1 /h fe2 (note 1) v ce =5.0v, i c =1.0ma 0.90 1.0 i v be1 -v be2 i v ce =5.0v, i c =10a 5.0 mv i v be1 -v be2 i v ce =5.0v, i c =100a 3.0 mv i v be1 -v be2 i v ce =5.0v, i c =10ma 5.0 mv 1) the lowest h fe reading is taken as h fe1 .
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